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Creators/Authors contains: "Ahmed, Sheikh Z."

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  1. ; ; ; ; ( , Physical Review B)
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  2. ; ; ; ; ( , Physical Review Applied)
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  3. ; ; ; ; ; ; ; ; ; ; et al ( , Journal of Lightwave Technology)
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  4. ; ; ; ; ; ; ; ; ; ; et al ( , Journal of Lightwave Technology)
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  5. ; ; ; ; ; ; ( , Journal of Lightwave Technology)
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  6. ; ; ; ; ( , Proceedings of the SPIE)
    Osiński, Marek ; Arakawa, Yasuhiko ; Witzigmann, Bernd (Ed.)
  7. ; ; ; ; ( , Conference on Lasers and Electro Optics 2021)
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  8. ; ; ; ( , IEEE Journal on Exploratory Solid-State Computational Devices and Circuits)
  9. ; ; ( , 2019 Device Research Conference (DRC))
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    The Tunnel field-effect-transistor (TFET) has widely been considered as one of the most viable replacements to the complementary metal oxide semiconductor (CMOS) devices due to their superior theoretical performance. Practically, though there have been scant demonstrations of the sub-60mV/dec of TFETs 1 , it has yet to be realized at acceptable current levels over a substantial current swing needed for circuit operation. It is therefore imperative to study the primary delimiters of TFETs, mainly trap-assisted tunneling (TAT) and Auger generation 2-4 , along with ways to reduce them in order to improve device performance. The effect of TAT in TFETs has been studied extensively 3,4 . Here, we study the role of transverse effective mass on Auger generation in a planar TFET and propose a method of improving device performance. 
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  10. ; ; ; ; ( , 2019 IEEE Photonics Conference (IPC))
    Superior performance of digital alloy APDs is attributed to the formation of "minigaps" in the material band-structure. However, no improvement is observed in dilute nitride APDs in presence of minigaps. We propose criteria which can judge the effectiveness of these minigaps. 
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